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2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet 1 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited general description the AA4005 is a class ab audio power amplifier which can deliver 2.7w into 3 ? speakers with 5.0v power supply and thd+n less than 10%. it is designed specially for notebook pc and portable media player applications. the AA4005 features stereo full differential input or 2 sets of stereo single-ended audio input. there are 4 different gain settings at btl mode - 6db, 10db, 15.6db and 21.6db, changed by setting gain0, gain1 pins. AA4005 is available in tssop-20 (edp) package. features output power, thd+n=10% 1.5w at btl mode for 8 ? speaker 2.3w at btl mode for 4 ? speaker 2.7w at btl mode for 3 ? speaker supply voltage range: 4.5v to 5.5v 4 selectable internal fixed gain setups stereo full differential input low power consumption at shutdown mode 150 a typical excellent click/pop noise suppression thermal shutdown protection applications notebook pc portable media player figure 1. package type of AA4005 tssop-20 edp
2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet 2 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited figure 2. pin configuration of AA4005 (top view) pin configuration 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 gnd gain0 gain1 outl+ lin- pvdd rin+ outl- lin+ bypass gnd shutdown outr+ rin- vdd pvdd outr- gnd nc gnd g package ( tssop-20 ( edp ))
3 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited 2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet pin description pin number pin name function 1, 11, 13, 20 gnd ground reference, it is better to connect with thermal pad. 2 gain0 internal gain set up 0, see table-1 below. 3 gain1 internal gain se tup 1, see table-1 below. 4 outl+ left channel positive output 5 lin- left channel negative input 6, 15 pvdd power supply for output stage 7rin+ right channel positive input for differential input, ac ground for single-ended input. 8 outl- left cha nnel negative output 9lin+ left channel positive input for differ ential input, ac ground for single-ended input 10 bypass internal reference voltage pin, connect a 1.0 f ceramic capacitor to gnd 12 nc no connected 14 outr- right channel negative output 16 vdd power supply for analog circuit 17 rin- right channel negative input 18 outr+ right channel positive output 19 shutdown shutdown mode select, l - shutdown enable h - shutdown disable, normal work
2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet 4 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited table-1, gain vs . gain0, gain1 logic level gain0 gain1 gain l l 6db l h 10db h l 15.6db h h 21.6db ordering information circuit type package AA4005 tr: tape and reel g: tssop-20(edp e1: lead free package temperature range part number marking id packing type lead free green lead free green tssop-20(edp) -40 to 85 o c AA4005gtr-e1 AA4005gtr-g1 AA4005g AA4005g-g1 tape and reel g1: green bcd semiconductor's pb-free products, as desi gnated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages.
5 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited 2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet parameter symbol value unit power supply voltage v dd 6.0 v input voltage v in -0.3 to v dd +0.3 v power dissipation (note 2) p d internally limited thermal resistance ja 35 (note 3) o c/w operating junction temperature t j 150 o c esd (machine mode) 200 v esd (human body mode) 2000 v storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10 seconds) t lead 260 o c absolute maximum ratings (note 1) parameter symbol min max unit input voltage v dd 4.5 5.5 v operating ambient temperature range t a -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. note 2: the maximum power dissipati on must be derated at elevated temperatures and is dictated by t jmax , ja and the ambient temperature t a . the maximum allowable po wer dissipation is p dmax = (t jmax -t a )/ ja . for the AA4005, t jmax = 150 o c, and the typical junction-to-ambie nt thermal resistance for tssop-20 (edp) package can be found in the absolute maximum ratings section. note 3: chip is soldered to 60mm 2 (4mm 15mm) copper (top side solder mask) of 1oz. on pcb with 8 0.5mm vias.
2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet 6 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited electrical characteristics parameter symbol conditions min typ max unit quiescent current i dd v in =0, i o =0 6.5 12 ma shutdown current i sd v shutdown =0 150 300 a shutdown v il 0.8 v v ih 2.0 v thermal shutdown temperature 165 o c hysteresis temp window 35 o c output offset voltage v in =0, no load 5 25 mv output power p o thd+n=1%, r l =3 ? , 2.1 w thd+n=10%, r l =3 ? , 2.7 w thd+n=1%, r l =4 ? , 1.8 w thd+n=10%, r l =4 ? , 2.3 w thd+n=1%, r l =8 ? 1.2 w thd+n=10%, r l =8 ? 1.5 w total harmonic di stortion plus noise thd+n p o =1w, r l =4 ? 0.08 % signal to noise ratio s/n p o =1w, r l =4 ? 100 db cross talk x talk f=1khz -100 db power supply rejection ration psrr c b =1 f, f=1khz, v ripple =0.2v rms 70 db output noise v no f=20hz~20khz, r l =8 ? 18 v rms v dd =5.0v, gain=6db, t a =25 o c, f=1khz, 22khz low pass filt er, unless otherwise specified.
7 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited 2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet typical performance characteristics figure 4. shutdown current vs. supply voltage figure 5. thd+n vs. output power 4.5 5.0 5.5 6.0 0 1 2 3 4 5 6 7 8 9 10 11 supply voltage _v dd (v) v in =0 i out =0 v shutdown =v dd quiescent current _i dd (ma) 10m 100m 1 0.1 1 10 (v dd =5.5v) (v dd =5.0v) output power (w) f=1khz r l =4 ? gain=6db lpf=22khz thd+n (%) figure 3. quiescent current vs. supply voltage 4.5 5.0 5.5 6.0 0 25 50 75 100 125 150 175 200 225 250 275 300 shutdown current_i sd ( a) supply voltage_v dd (v) v in =0 i out =0 v shutdown =0 figure 6. thd+n vs. output power 10m 100m 1 0.1 1 10 output power (w) v dd =5.0v f=1khz r l =4 ? gain=6db lpf=22khz thd+n (%)
2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet 8 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 7. thd+n vs. output power 10m 100m 1 0.1 1 10 output power (w) v dd =5.0v f=1khz r l =8 ? gain=6db lpf=22khz thd+n (%) figure 8. thd+n vs. output power 10m 100m 1 0.1 1 10 output power (w) v dd =5.0v f=1khz r l =3 ? gain=6db lpf=22khz thd+n (%) figure 9. thd+n vs. output power 10m 100m 1 0.1 1 10 gain=10db gain=15.6db gain=21.6db gain=6db output power (w) v dd =5.0v f=1khz r l =4 ? lpf=22khz thd+n (%) figure 1 0 . thd+n vs. output power 10m 100m 1 0.01 0.1 1 10 f=10khz f=20hz output power (w) v dd =5.0v r l =4 ? gain=6db lpf=30khz thd+n (%) f=1khz
9 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited 2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet typical performance ch aracteristics (continued) figure 11. thd+n vs. frequency 100 1k 10k 0.01 0.1 1 10 frequency (hz) v dd =5.0v r l =4 ? gain=6db lpf=30khz thd+n (%) p o =1.5w p o =1w p o =0.25w figure 12. thd+n vs. frequency 100 1k 10k 0.01 0.1 1 10 frequency (hz) v dd =5.0v r l =8 ? gain=6db lpf=30khz thd+n (%) p o =1000w p o =500mw p o =250mw figure 13. thd+n vs. frequency 100 1k 10k 0.01 0.1 1 10 lpf=80khz lpf=30khz frequency (hz) v dd =5.0v r l =4 ?, p o =1w gain=6db lpf=30khz thd+n (%) figure 14. thd+n vs. frequency 100 1k 10k 0.01 0.1 1 10 gain=10db frequency (hz) v dd =5.0v r l =8 ? , p o =1w gain=6db lpf=30khz thd+n (%) gain=6db gain=15.6db gain=21.6db
2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet 10 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 15. gain vs. frequency 100 1k 10k 4 6 8 10 12 14 16 18 20 22 24 20 gain (db) frequency (hz) v dd =5.0v r l =8 ? , c in =1.0 f 20k gain0, gain1=h, h gain0, gain1=h, l gain0, gain1=l, h gain0, gain1=l, l 100 1k 10k -90 -80 -70 -60 -50 -40 -30 -20 -10 0 20 psrr (db) frequency (hz) v dd =5.0v c b =1.0 f, r l =8 ? v ripple =0.2v rms input ac ground 20k figure 16. psrr vs. frequency figure 17. crosstalk vs. frequency 100 1k 10k -140 -120 -100 -80 -60 -40 -20 0 right -> left 20 crosstalk (db) frequency (hz) v dd =5.0v r l =8 ? , p o =1.0w 20k left -> right
11 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited 2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet typical application figure 2 1 . typical application of AA4005 for single-ended input - + amp1 - amp2 + gain control - + amp3 - amp4 + gain control left in- c in 0.47 f c in 0.47 f c in 0.47 f c in 0.47 f right in- vref c s 10 f 1 f v dd v dd pvdd + c b 1 f bypass shutdown 19 10 7 17 9 5 6 15 16 4 8 18 14 2 3 left out+ left out- right out+ right out- gain0 gain1 1, 11, 13, 20
2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet 12 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited typical applicat ion (continued) figure 22. typical application of AA4005 for full differential input - + amp1 - amp2 + gain control - + amp3 - amp4 + gain control left in- c in 0.47 f c in 0.47 f c in 0.47 f c in 0.47 f right in- vref c s 10 f 1 f v dd v dd pvdd + c b 1 f bypass shutdown 19 10 7 17 9 5 6 15 16 4 8 18 14 2 3 left out+ left out- right out+ right out- gain0 gain1 1, 11, 13, 20 left in+ right in+
13 aug. 2008 rev. 1. 1 bcd semiconductor manufacturing limited 2.7w stereo audio power amplifier with shutdo wn, 4 selectable gain setups AA4005 preliminary datasheet mechanical dimensions tssop-20(edp) unit: mm(inch) 0.200(0.008) 0.280(0.011) 0.050(0.002) 0.150(0.006) 0.900(0.035) 1.050(0.041) 1.200(0.047) max 0.340(0.013) 0.540(0.021) 10 14 0.250(0.010)typ 0.450(0.018) 0.750(0.030) 1.000(0.039) ref 0 8 r0.090(0.004)min r0.090(0.004)min top & bottom 4- 0.200(0.008)min 4.300(0.169) 4.500(0.177) 0.100(0.004) 0.190(0.007) index 0.750(0.030) 0.850(0.033) dp 0.000(0.000) 0.100(0.004) exposed pad 6.200(0.244) 6.600(0.260) 6.400(0.252) 6.600(0.260) 2.400(0.094) 3.700(0.146) max max #1 pin 0.650(0.026)typ
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yishan road, shanghai 200233, china tel: +021-6485-1491, fa x: +86-021-5450-0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manu facturing co., ltd., shenzhen office unit a room 1203,skyworth bldg., gaoxin ave.1.s., nanshan district shenzhen 518057, china tel: +86-0755-8660-4900, fax: +86-0755-8660-4958 taiwan office (taipei) bcd semiconductor (taiwan) company limited 3f, no.17, lane 171, sec. 2, jiu-zong rd., ne i-hu dist., taipei(114), taiwan, r.o.c tel: +886-2-2656 2808 fax: +886-2-2656-2806/26562950 taiwan office (hsinchu) bcd semiconductor (taiwan) company limited 8f, no.176, sec. 2, gong-dao 5th road, east district hsinchu city 300, taiwan, r.o.c tel: +886-3-5160181, fax: +886-3-5160181 - headquarters bcd (shanghai) micro-electronics limited no. 1600, zi xing road, shanghai zizhu scie nce-based industrial park, 200241, p. r.c. tel: +86-021-2416-2266, fax: +86-021-2416-2277 usa office bcd semiconductor corp. 48460 kato road, fremont, ca 94538, usa tel: +1-510-668-1950 fax: +1-510-668-1990 korea office bcd semiconductor limited korea office. room 101-1112, digital-empire ii, 486 sin-dong, yeongtong-gu, suwon-city, gyeonggi-do, korea tel: +82-31-695-8430 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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